Compound semiconductors. Volume 1, Preparation of III-V compounds (Willardson, Robert K.; Goering, Harvey L.; ed.s)
نویسندگان
چکیده
منابع مشابه
Progress in Antimonide Based III-V Compound Semiconductors and Devices
In recent years, the narrow bandgap antimonide based compound semiconductors (ABCS) are widely regarded as the first candidate materials for fabrication of the third generation infrared photon detectors and integrated circuits with ultra-high speed and ultra-low power consumption. Due to their unique bandgap structure and physical properties, it makes a vast space to develop various novel devic...
متن کاملOn the possible volume of $mu$-$(v,k,t)$ trades
A $mu$-way $(v,k,t)$ $trade$ of volume $m$ consists of $mu$ disjoint collections $T_1$, $T_2, dots T_{mu}$, each of $m$ blocks, such that for every $t$-subset of $v$-set $V$ the number of blocks containing this t-subset is the same in each $T_i (1leq i leq mu)$. In other words any pair of collections ${T_i,T_j}$, $1leq i< j leq mu$ is a $(v,k,t)$ trade of volume $m$. In th...
متن کاملTheory of ferromagnetic (III,Mn)V semiconductors
The body of research on (III,Mn)V diluted magnetic semiconductors initiated during the 1990’s has concentrated on three major fronts: i) the microscopic origins and fundamental physics of the ferromagnetism that occurs in these systems, ii) the materials science of growth and defects and iii) the development of spintronic devices with new functionalities. This article reviews the current status...
متن کاملStructure of metal-rich „001... surfaces of III-V compound semiconductors
The atomic structure of the group-III-rich surface of III-V semiconductor compounds has been under intense debate for many years, yet none of the models agrees with the experimental data available. Here we present a model for the three-dimensional structure of the (001)-c(832) reconstruction on InSb, InAs, and GaAs surfaces based on surface x-ray diffraction data that was analyzed by direct met...
متن کاملCohesive energies of cubic III-V semiconductors.
Cohesive energies for twelve cubic III-V semiconductors with zincblende structure have been determined using an ab-initio scheme. Correlation contributions, in particular, have been evaluated using the coupled-cluster approach with single and double excitations (CCSD). This was done by means of increments obtained for localized bond orbitals and for pairs and triples of such bonds. Combining th...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: Journal of Chemical Education
سال: 1964
ISSN: 0021-9584,1938-1328
DOI: 10.1021/ed041pa472.1